下属人数:4

汇报对象:Director

工作职责:

Job Scope: 4F2 DRAM Memory Cell Integration as PIE Engineer Leader.

The DRAM device still needs to reduce chip size by the shrink technology. But, NO EUV tool is becoming much harder to scaling down the technology node. Vertical-Channel-Transistor VCT is a candidate transistor to achieve high density memory cell as 4F2 DRAM Memory Cell. For same feature size, the 4F2 cell size become smaller than traditional 6F2 cell and 8F2 cell, so the memory capacity of 4F2 cell DRAM increases but the integration process difficulty also increases.

1. NC Loop Development: Connect Drain to M0 Pad.

2. PC Loop Development: Connect BL to M0 Pad and WL to M0 Pad.

3. M0 Loop Development: M0 Pad isolation for capacitor integration.

工作职责:

Job Scope: Gray Level Measurement Method Development for Trench and Hole Depth Monitoring.

In chip fabrication process, each process is combined with metrology or inspection step in order to control structure feature dimension. The CD-SEM (Critical Dimension Scanning Electron Microscope) is as a metrology tool in the chip fabrication process. In the cases of after lithography process and etching process, the critical dimensions such as LWR, LER and Wiggling are measured by the CD-SEM to control the SADP and SAQP schemes.

工作职责:

Job Scope: CVD Tool and Process Development.

CVD process

①Transports of reactants from main gas stream through boundary region to wafer surface

②Adsorption of reactants on wafer surface

③Surface reactions, including chemical decomposition, reaction, re-deposition, emission, diffusion, surface migration

④Desorption of byproducts

⑤Transports of byproducts through boundary region.

CVD reaction is a surface reaction to grow the solid layer such as semiconductor layer, insulating layer and metal layer. There are three energies of thermal energy, plasma energy and optical energy as an option used in the surface reaction. Both of Mass transfer flux in boundary region and surface reaction flux are very important in CVD process. In steady state, the mass transfer flux equalizes with the surface reaction flux. The mass transfer flux depends on the boundary region thickness. The surface reaction flux depends on the surface temperature. So, the gases supply control and the surface reaction control are the key factors in CVD process.

Mist-CVD Tool: Al2O3 passivation layer

Material source: Al(acac)3 solution (acac: Acetylacetonate)

Deposition rate: 10-50 nm/min

Layer thickness: 10-100 nm